J201 Fet
J201 is a general purpose amplifier JFET transistor, in this post we will discuss about J201 transistor pinout, equivalent, uses, features & other details about this transistor.
Features / Technical Specifications:
J201 Datasheet (PDF) 0.1. 2sj201.pdf Size:268K toshiba. 2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage: VDSS = -200 V High forward transfer admittance: Yfs = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -200. Because Jfets vary from one unit to the next among say J201's, the substitutes part #'s like 2n5457's will probably work anywhere from 'great' to 'just wonderful' but some people may be able to type better about differences they were able to discern. Another Great Jfet is the NTE458, which is a little higher gain yet than a J201.
- Package Type: TO-92
- Transistor Type: N Channel
- Max Voltage Applied From Gate to Source: –40
- Max Drain to Gate Voltage Should Be: 40V
- Max Continues Gate Current is: 50mA
- Minimum to Maximum Gate to Source Cuttoff Voltage : -0.3 to -1.5
- Max Power Dissipation is: 350mW
- Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
- Very Low Noise & High Gain
Order today, ships today. J201 – JFET N-Channel 40V 625mW Through Hole TO-92-3 from ON Semiconductor. Pricing and Availability on millions of electronic components from Digi-Key Electronics. J201 Datasheet pdf - N-Channel JFET General Purpose Amplifier - Calogic Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA Up1 LM317 LM339 MAX232 NE555 LM324 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148 5Q0765RT. JFET J201 N-Channel Transistor. Used in MOD Kits.Note - this is a fragile component! Use caution not to overheat or break leads.
J201 Replacement and Equivalent:
2N4338, 2N4339, 2N4340, 2N4341, 2N5458, 2N5459, 2N5457, NTE458 (Note: Pin configuration of the equivalent transistors may different from J201, therefore it is recommended to check pin configuration of the transistor you are using in the place of J201)
J201 Transistor Explained / Description:
J201 is a general purpose JFET transistor build for amplification purposes. It is manufactured in TO-92 and SOT-23 packages. The transistor is having some good features in its small packages like low cutoff voltage, Very low noise and high gain etc. with these features it can perform very well where there is requirements of more gain with low noise amplification of signals. Moreover due to its low power operating capabilities which are as low as 1.5V it is ideal to use in battery powered circuits.
Where We Can Use it & How to Use:
J201 can be used in variety of low level signal amplification purposes for example if one wants to amplify a low gain signal to high gain with filtration of noise. It can be used in audio preamplifiers, mic preamplifiers and related circuits. Other than that it can also be used in infrared signal detection and amplification.
Applications:
Sensor Circuits
Audio Preamp circuits
Audio Amplifier Stages
Laser Detection & Data Amplifications
Infrared Detection & Data Amplifications
How to Safely Long Run in a Circuit:
For getting long term reliable performance from J201 FET transistor do drive load of more than 50mA, do not increase gate to source voltage from -40V and drain to gate voltage from 40V. And always store and operate the transistor in temperature above -55 centigrade and below +150 centigrade.
Datasheet:
To Download the datasheet just copy and paste the below link in your browser.
J201 Jfet Pdf
https://pdf1.alldatasheet.com/datasheet-pdf/view/245178/FAIRCHILD/J201/+Q_W28-VDvHSEIlOpfPzYz+/datasheet.pdf
Type Designator: J201
Type of Transistor: JFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.625 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 1.5 V
J201 Fet
Maximum Drain Current |Id|: 0.001 A
Maximum Junction Temperature (Tj): 150 °C
Package: TO-92
J201 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
J201 Datasheet (PDF)
0.1. 2sj201.pdf Size:268K _toshiba
2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -200 VJEDEC Gate-source voltag
0.2. j201.pdf Size:851K _fairchild_semi
J201 MMBFJ201J202 MMBFJ202GSTO-92GS SOT-23 NOTE: Source & DrainDD are interchangeableMark: 62P / 62QN-Channel General Purpose AmplifierThis device is designed primarily for low level audio and generalpurpose applications with high impedance signal sources. Sourcedfrom Process 52.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Uni
0.3. j201 j202 mmbfj201 mmbfj202 mmbfj203.pdf Size:783K _fairchild_semi
January 2008J201 - J202 / MMBFJ201 - MMBFJ203N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.TO-92 SOT-2332MarkingMarking J201MMBFJ201 : 62PJ202MMBFJ202 : 62Q1 11. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute
0.4. j201 j202 j204c sst201 sst202 sst204c.pdf Size:78K _vishay
J/SST201 Series Vishay SiliconixN-Channel JFETsJ201 SST201J202 SST202J204 SST204PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST201 -0.3 to -1.5 -40 0.5 0.2J/SST202 -0.8 to -4 -40 1 0.9J/SST204 -0.3 to -2 -25 0.5 0.2FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J201
0.5. j201 j202 j203 j204 sst201 sst202 sst203 sst204.pdf Size:22K _calogic
N-Channel JFETGeneral Purpose AmplifierCORPORATIONJ201 J204 / SST201 SST204FEATURES ABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified) High Input Impedance Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Temperature Range
0.6. cj201nl.pdf Size:151K _jiangsu
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ201NL TRANSISTOR (NPN) SOT23 FEATURES High Collector Current Capability Low Collector-emitter Saturation Voltage High Efficiency Leading to Less Heat Generation 1. BASE Reduced PCB Requirements 2. EMITTER Alternatived Effectively to MOSFETS in Specific Applications
0.7. lj2015-52.pdf Size:105K _china
LJ2015-52FD75C NPN P T =25 75 WCM CI 10 ACMT 150 jmT -55~150 stgV I 2mA 50 V(BR)CBO CBV I 2mA 50 V(BR)CEO CEI V =20V 2 mACBO CBI V =20V 2 mACEO EBV 2.5 VBEsatI =5ACI =0.5AB
0.8. cs7456 lj2015-53.pdf Size:70K _china
LJ2015-53CS7456DP N P T =25 1.9 WD AI V =10V,T =25 5.7 AD GS AI 40 ADMV 20 VGST +150 jmT -55 +150 stgR 65thJA /WR 1.8thJCBV V =0V,I =0.25mA 100 VDSS GS DV =10V,I =9.3A 0.025
Datasheet: JFTJ105, J174, J175, J176, J177, MMBFJ175, MMBFJ176, MMBFJ177, IRF740, J202, MMBFJ201, MMBFJ202, J210, MMBFJ210, MMBFJ211, MMBFJ212, J270.
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J201 Jfet
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J201 Fet Transistor