6970 Mosfet
The HD6970 heatsink is designed to cool surface mount components (memory, and mosfets) on the most recent revision of ATI Radeon™ HD 6970 2Gb Series Reference Design boards, as well as (1) HD 6950 2Gb Series reference design graphics board.
Type Designator: AON6970
Type of Transistor: MOSFET
- MOSFET N-CH 30V 30A LFPAK / Trans MOSFET N-CH Si 30V 30A 5-Pin(4+Tab) LFPAK T/R 200 pieces. Lowest to $3.6970. Fairchild/ON Semiconductor. TRANS NPN 30V 3A SOT-89 / Trans GP BJT NPN 30V 3A 4-Pin(3+Tab) SOT-89 T/R 1000 pieces. Lowest to $0.1040. Quad N-Channel 30-V (D-S) MOSFETs.
- MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 48 A Features. Low RDS(on) to Minimize Conduction Losses. Low Capacitance to Minimize Driver Losses. Optimized Gate Charge to Minimize Switching Losses. Optimized for 5 V, 12 V Gate Drives. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications.
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 31(78) W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V
Maximum Drain Current |Id|: 58(85) A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 15.5(16) nS
Drain-Source Capacitance (Cd): 284(1100) pF
Maximum Drain-Source On-State Resistance (Rds): 0.0054(0.0015) Ohm
Package: DFN5X6D
AON6970 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6970 Datasheet (PDF)
0.1. aon6970.pdf Size:529K _aosemi
6970 Mosfet Motor
AON697030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V)
8.1. aon6978.pdf Size:476K _aosemi
AON697830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. aon6973a.pdf Size:482K _aosemi
AON6973A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)
6970 Mosfet Drive
8.3. aon6974.pdf Size:648K _aosemi
AON697430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
8.4. aon6974a.pdf Size:482K _aosemi
AON6974A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON6924, AON6926, AON6928, AON6932A, AON6934A, AON6936, AON6938, AON6946, IRF840, AON6973A, AON6974A, AON6978, AON6980, AON7200, AON7210, AON7220, AON7240.
LIST
Last Update
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
Type Designator: AON6978
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 31(33) W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20(12) V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V
Maximum Drain Current |Id|: 28(36) A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 3.2(4) nS
Drain-Source Capacitance (Cd): 474(513) pF
Maximum Drain-Source On-State Resistance (Rds): 0.0057(0.0038) Ohm
Package: DFN5X6B
AON6978 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6978 Datasheet (PDF)
0.1. aon6978.pdf Size:476K _aosemi
AON697830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. aon6973a.pdf Size:482K _aosemi
AON6973A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. aon6970.pdf Size:529K _aosemi
AON697030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V)
8.3. aon6974.pdf Size:648K _aosemi
AON697430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)
8.4. aon6974a.pdf Size:482K _aosemi
AON6974A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)
6970 Mosfet Wiring
Datasheet: AON6932A, AON6934A, AON6936, AON6938, AON6946, AON6970, AON6973A, AON6974A, IRF640, AON6980, AON7200, AON7210, AON7220, AON7240, AON7242, AON7244, AON7246.
LIST
Last Update
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
6970 Mosfet Pdf